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Número de pieza | TQP9108 | |
Descripción | 2-stage Power Amplifier | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
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Wireless Infrastructure
Repeaters, Boosters, DAS
High Power Amplifiers
Small cell BTS
TQP9108
1.7-2.17 MHz 2-stage Power Amplifier
3.5x4.5 mm Leadless SMT Package
Product Features
1.71-2.17 GHz Frequency Range
30.5 dB gain
+46 dBm Output IP3 @ 24 dBm/tone
39% PAE @ 27 dBm Pout
Internally Matched
Integrated interstage matching
Bias Adjustable
Low idle current
General Description
The TQP9108 is a high-efficiency two-stage power
amplifier in a low-cost surface-mount package. The
amplifier is able to achieve 39% power added efficiency
at 27 dBm output power while operating with a low 65
mA idle current. The amplifier is designed to ensure that
all odd-order IMD products are below -17 dBm at all
output power levels below 24 dBm/tone.
The TQP9108 integrates two high performance amplifier
stages onto a module to allow for a compact system
design and requires very few external components for
operation. The amplifier is bias adjustable allowing the
amplifier’s power consumption to be optimized. The
TQP9108 is available in a lead-free/RoHS-compliant 13-
pin 3.5x4.5mm surface mount package package and is
pin-compatible to the lower frequency band version in
the family with the TQP9107 (699-960 MHz).
Functional Block Diagram
RFin VPD1 VPD2 N/C N/C
13 12 11 10 9
N/C RFout
87
AMP1
Matching
Network
AMP2
Matching
Network
Pin 1
Reference Mark
Package Topside
12
VBIAS VCC
34
N/C N/C
5
N/C
Top View
6
N/C
Exposed
Backside Pad
GND
Pin Configuration
Pin No.
1
2
3, 4, 5, 6, 8, 9, 10
7
11, 12
13
Backside Pad
Label
VBIAS
VCC
GND or N/C
RFout
VPD
RF in
GND
Ordering Information
Part No.
TQP9108
TQP9108-PCB
Description
1.71–2.17 GHz Power Amplifier
Evaluation board
Datasheet: Rev I 04-04-16
© 2016 TriQuint Semiconductor, Inc
- 1 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
1 page TQP9108
1.7-2.17 MHz 2-stage Power Amplifier
Typical Performance at Vcc = 5V
Test Conditions: VCC=+5 V, Vpd=+4.3 V, Temp.=+25°C, 50Ω System
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output P1dB
Output IP3
Pout= +24 dBm/tone, f= 1 MHz
Quiescent Collector Current, ICQ
Typical Value
1840
1960
2140
28 28.5 29.4
-12 -11
-9
32.3 32.3 32.3
46.2 45.4 45.7
68
Units
MHz
dB
dB
dBm
dBm
mA
Performance Plots
Gain vs. Frequency
32
Temp.=+25°C
30
28
26
24
22
1700
800
700
600
500
400
300
200
100
0
5
1800
1900
2000
Frequency (MHz)
Icc vs. Pout
2100
Temp.=+25°C
2200
10 15 20 25 30 35
Pout (dBm)
OIP3 vs. Pout/tone
50
Temp.=+25°C
45
40
2140 MHz
1960 MHz
1840 MHz
35
30
14
-30
-35
-40
16 18 20 22
Pout/Tone (dBm)
ACLR
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
Temp.=+25°C
24
-45
-50
1840 MHz
-55 1960 MHz
2140 MHz
-60
14 15 16 17 18 19 20 21 22 23 24 25
Pout (dBm)
P1dB vs. Frequency
34
Temp.=+25°C
33
32
31
30
29
1840
1890
1940 1990 2040
Frequency (MHz)
2090
2140
Datasheet: Rev I 04-04-16
© 2016 TriQuint Semiconductor, Inc
- 5 of 9 -
Disclaimer: Subject to change without notice
www.triquint.com / www.qorvo.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TQP9108.PDF ] |
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