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PDF AP70SL250AS Data sheet ( Hoja de datos )
| Número de pieza | AP70SL250AS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP70SL250AS (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP70SL250AS
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP70SL250A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
VDS @ Tj,max.
RDS(ON)
ID3
750V
0.25Ω
15A
G D S TO-263(S)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
dv/dt
PD@TC=25℃
PD@TA=25℃
EAS
dv/dt
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
700
+20
15
9.6
38
50
152
3.12
168
15
V
V
A
A
A
V/ns
W
W
mJ
V/ns
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value
0.82
40
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201505201
1 page  
AP70SL250AS
2
I D =1mA
1.6
200
160
1.2 120
0.8 80
0.4 40
0
-100
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
400
T j =25 o C
360
320
.280
240
V GS =10V
200
160
0 4 8 12 16
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP70SL250AS.PDF ] | |
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