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PDF STF15N60M2-EP Data sheet ( Hoja de datos )
| Número de pieza | STF15N60M2-EP | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF15N60M2-EP,
STFI15N60M2-EP
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP
Power MOSFET in TO-220FP and I²PAKFP packages
Datasheet - production data
TO-220FP
I2PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Features
Order code
STF15N60M2-EP
STFI15N60M2-EP
VDS@TJmax
650 V
RDS(on)max.
0.378 Ω
ID
11 A
Extremely low gate charge
Excellent output capacitance (COSS) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Applications
Switching applications
Tailored for very high frequency converters
(f > 150 kHz)
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and improved vertical structure, the
devices exhibit low on-resistance and optimized
switching characteristics with very low turn-off
switching loss, rendering them suitable for the
most demanding very high frequency converters.
Table 1: Device summary
Order code
Marking Package Packaging
STF15N60M2-EP
TO-220FP
15N60M2EP
STFI15N60M2-EP
I²PAKFP
(TO-281)
Tube
January 2015
DocID027373 Rev 1
This is information on a product in full production.
1/15
www.st.com
1 page  
STF15N60M2-EP, STFI15N60M2-EP
Electrical characteristics
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off-delay time
tf Fall time
Table 8: Switching times
Test conditions
VDD = 300 V, ID = 5.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Switching times
test circuit for resistive load"
and Figure 19: "Switching
time waveform" )
Min. Typ. Max. Unit
- 11 - ns
- 10 - ns
- 40 - ns
- 15 - ns
Symbol
ISD(1)
ISDM(2)
VSD (3)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 9: Source drain diode
Test conditions
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, I = 11 A
ISD = 11 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "
Test circuit for inductive load
switching and diode
recovery times" )
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: " Test circuit
for inductive load switching
and diode recovery times")
Min.
-
-
-
-
-
-
-
-
-
Typ.
280
2.7
19.5
400
3.8
19
Max.
11
44
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width is limited by safe operating area.
(3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID027373 Rev 1
5/15
5 Page 
STF15N60M2-EP, STFI15N60M2-EP
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Package mechanical data
Table 10: TO-220FP mechanical data
mm
Min.
Typ.
Max.
4.4 4.6
2.5 2.7
2.5 2.75
0.45 0.7
0.75 1
1.15 1.70
1.15 1.70
4.95 5.2
2.4 2.7
10 10.4
16
28.6 30.6
9.8 10.6
2.9 3.6
15.9 16.4
9 9.3
3 3.2
DocID027373 Rev 1
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STF15N60M2-EP.PDF ] | |
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