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PDF DF2S6.8UCT Data sheet ( Hoja de datos )
| Número de pieza | DF2S6.8UCT | |
| Descripción | ESD Protection Diodes | |
| Fabricantes | Toshiba Semiconductor | |
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ESD Protection Diodes Silicon Epitaxial Planar
DF2S6.8UCT
DF2S6.8UCT
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Cathode
2: Anode
CST2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
VESD
±8
kV
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2010-04
1 2014-04-15
Rev.3.0
1 page  
9. ESD Clamp Waveform (Note)
DF2S6.8UCT
Fig. 9.1 +8 kV
Fig. 9.2 -8 kV
Fig. 9.3 IEC61000-4-2(Contact)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5 2014-04-15
Rev.3.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DF2S6.8UCT.PDF ] | |
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