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PDF STN6335 Data sheet ( Hoja de datos )
| Número de pieza | STN6335 | |
| Descripción | Dual N Channel Enhancement Mode MOSFET | |
| Fabricantes | Stanson Technology | |
| Logotipo |  |
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STN6335
Dual N Channel Enhancement Mode MOSFET
0.95A
DESCRIPTION
STN6335 is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer circuits where high-side switching, low in-line power loss and
resistance to transients are needed.
PIN CONFIGURATION
SOT-363 / SC70-6L
D1 G2 S2
35YW
FEATURE
� 20V/0.95A, RDS(ON) = 380mΩ@VGS =4.5V
� 20V/0.75A, RDS(ON) =450mΩ@VGS =2.5V
� 20V/0.65A, RDS(ON) =800mΩ@VGS =1.8V
� Super high density cell design for extremely
low RDS(ON)
� Exceptional low on-resistance and maximum
DC current capability
� SOT-363 / SC70-6L package design
S1 G D2
Y: Year
A: Process Code
ORDERING INFORMATION
Part Number
Package
STN6335
SOT-363 / SC70-6L
※ Process Code : A ~ Z(1~26) ; a ~ z(27~52)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
Part Marking
YA
STN6335 2008. V1
1 page  
TYPICAL CHARACTERICTICS
STN6335
Dual N Channel Enhancement Mode MOSFET
0.95A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN6335 2008. V1
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STN6335.PDF ] | |
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