(PDF) STN4416 Datasheet - N Channel Enhancement Mode MOSFET

Número de pieza	STN4416
Descripción	N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � 20V/10A, RDS(ON) = 11mΩ (Typ.) @VGS = 4.5V � 20V/5.6A, RDS(ON) = 23mΩ @VGS = 2.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 STN4416 YA Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4416 2009. V1 1 page TYPICAL CHARACTERICTICS STN4416 N Channel Enhancement Mode MOSFET 10A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4416 2009. V1 5 Page

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PDF STN4416 Data sheet ( Hoja de datos )