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Número de pieza | STP3052D | |
Descripción | P Channel Enhancement Mode MOSFET | |
Fabricantes | Stanson Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP3052D (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! STP3052D
P Channel Enhancement Mode MOSFET
-25.0A
DESCRIPTION
STP3052D is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application. Such as DC/DC converter
and Desktop computer power management.
The package is universally preferred for commercial industrial surface mount
applications.
PIN CONFIGURATION (D-PAK)
FEATURE
TO-252
TO-251
-30V/-25.0A, RDS(ON) = 45mΩ (Typ.)
@VGS = -10V
-30V/-16.0A, RDS(ON) = 78mΩ
@VGS =-5.0V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP3052D 2009. V1
1 page TYPICAL CHARACTERICTICS
STP3052D
P Channel Enhancement Mode MOSFET
-25.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP3052D 2009. V1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STP3052D.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP3052D | P Channel Enhancement Mode MOSFET | Stanson Technology |
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