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PDF PJT7600 Data sheet ( Hoja de datos )
| Número de pieza | PJT7600 | |
| Descripción | Complementary Enhancement Mode MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PJT7600 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PPJT7600
20V Complementary Enhancement Mode MOSFET – ESD Protected
Voltage 20 / -20V Current 1 / -0.7A
SOT-363
Features
Application
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-363 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0002 ounces, 0.006 grams
Marking: T60
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
N-Ch LIMIT P-Ch LIMIT
20 -20
+8 +8
1 -0.7
4 -2.8
350
2.8
-55~150
RθJA
357
UNITS
V
V
A
A
mW
mW/ oC
oC
oC/W
August 16,2013-REV.00
Page 1
1 page  
PPJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
August 16,2013-REV.00
Page 5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PJT7600.PDF ] | |
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