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PDF PJQ1901 Data sheet ( Hoja de datos )
| Número de pieza | PJQ1901 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PJQ1901 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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PPJQ1901
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-0.75A
Features
Low Voltage Drive (1.2V).
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
DFN 3L
Mechanical Data
Case: DFN 3L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00004 ounces, 0.0011 grams
Marking: 1
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current, tp<10us
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient, t<10s (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+10
-0.75
-2.0
900
7.2
-55~150
139
UNITS
V
V
A
A
mW
mW/ oC
oC
oC/W
August 28,2015-REV.00
Page 1
1 page  
PPJQ1901
PART NO PACKING CODE VERSION
Part No Packing Code
PJQ1901_R1_00001
Package Type
DFN 3L
Packing type
8K pcs / 7” reel
Marking
1
Version
Halogen free
MOUNTING PAD LAYOUT
August 28,2015-REV.00
Page 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PJQ1901.PDF ] | |
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