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Número de pieza | MTE013N08H8 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTE013N08H8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C161H8
Issued Date : 2016.03.04
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTE013N08H8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=10A
80V
40A
10.5A
9.1 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTE013N08H8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device
Package
Shipping
MTE013N08H8-0-T6-G
DFN5×6
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE013N08H8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C161H8
Issued Date : 2016.03.04
Revised Date :
Page No. : 5/ 10
Typical Characteristics
Typical Output Characteristics
50
10V, 9V, 8V,7V
40
6V
Brekdown Voltage vs Junction Temperature
1.4
1.2
30
20
10 5V
VGS=4.5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=6V
10
VGS=10V
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
1
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
ID=10A
80
60
40
20
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
2
1.6
1.2
0.8
VGS=10V, ID=10A
0.4 RDSON @ Tj=25°C : 9.1 mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTE013N08H8
CYStek Product Specification
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet MTE013N08H8.PDF ] |
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