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PDF MTE011N10RJ3 Data sheet ( Hoja de datos )
| Número de pieza | MTE011N10RJ3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE011N10RJ3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.03.09
Revised Date : 2016.04.27
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE011N10RJ3
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
100V
48A
10.6A
10 mΩ(typ)
Symbol
MTE011N10RJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTE011N10RJ3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE011N10RJ3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.03.09
Revised Date : 2016.04.27
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Coss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
100
10
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8 VDS=50V
6
1 VDS=15V
4
VDS=80V
0.1
0.01
0.001
1000
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
Maximum Safe Operating Area
100
2
ID=22A
0
0 5 10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
60
RDSON
100 Limited
100μs
1ms
10 10ms
100ms
1 TC=25°C, Tj=175°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1s
DC
0.1
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
50
40
30
20
10 Tj(max)=175°C,VGS=10V, RθJC=2.5°C/W
Single Pulse
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE011N10RJ3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTE011N10RJ3.PDF ] | |
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