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PDF MTE011N10RE3 Data sheet ( Hoja de datos )
| Número de pieza | MTE011N10RE3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE011N10RE3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C169E3
Issued Date : 2015.12.04
Revised Date : 2016.04.27
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE011N10RE3
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
100V
58A
9A
11 mΩ(typ)
Symbol
MTE011N10RE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTE011N10RE3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE011N10RE3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C169E3
Issued Date : 2015.12.04
Revised Date : 2016.04.27
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Coss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
100
10
0
100
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
10
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8 VDS=50V
6
1 VDS=15V
4
VDS=80V
0.1
0.01
0.001
1000
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
100 Limited
10
10μs
100μs
1ms
1 TC=25°C, Tj=175°C
VGS=10V, RθJC=1.5°C/W
Single Pulse
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
2
ID=22A
0
0 5 10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
70
60
50
40
30
20
10 VGS=10V, RθJC=1.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE011N10RE3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTE011N10RE3.PDF ] | |
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