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PDF MTE010N10F3 Data sheet ( Hoja de datos )
| Número de pieza | MTE010N10F3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE010N10F3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C944F3
Issued Date : 2014.06.09
Revised Date : 2015.09.04
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 BVDSS
ID@ TC=25°C, VGS=10V
(silicon limit)
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
100V
70A
9.6mΩ
10.1mΩ
Symbol
MTE010N10F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
Package
Shipping
MTE010N10F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE010N10F3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C944F3
Issued Date : 2014.06.09
Revised Date : 2015.09.04
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1000
1
C oss 0.8
ID=1mA
100
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
1000
100
Maximum Safe Operating Area
RDS(ON)
Limit
10μs
100μs
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=1°C/W
single pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=80V
8 VDS=50V
VDS=20V
6
4
2
ID=20A
0
0 10 20 30 40 50 60
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
80
70 Silicon limit
60
50
40
Package limit
30
20
10 VGS=10V, RθJC=1°C/W
0
0 25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE010N10F3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTE010N10F3.PDF ] | |
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