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PDF MTD07N04J3 Data sheet ( Hoja de datos )
| Número de pieza | MTD07N04J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTD07N04J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C140J3
Issued Date : 2015.08.11
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTD07N04J3
BVDSS
ID@VGS=10V, TC=25°C
40V
50A
RDS(ON)@VGS=10V, ID=20A 6.3 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=10A 8.4 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTD07N04J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTD07N04J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD07N04J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C140J3
Issued Date : 2015.08.11
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
100
Ciss 1.2
1
C oss
0.8
Crss 0.6
ID=1mA
ID=250μA
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDSON
Limited
100
100μs
1ms
10ms
10 100ms
1s
1 TC=25°C, Tj=150°C
VGS=10V, RθJC=2.3°C/W
Single Pulse
DC
0.1
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
8
6
4
VDS=20V
2 ID=20A
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
70
60 Silicon Limit
50
40
30 Package Limit
20
10 VGS=10V, RθJC=2.3°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTD07N04J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTD07N04J3.PDF ] | |
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