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PDF MTD07N04H8 Data sheet ( Hoja de datos )

Número de pieza MTD07N04H8
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes Cystech Electonics 
Logotipo Cystech Electonics Logotipo



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No Preview Available ! MTD07N04H8 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C140H8
Issued Date : 2015.04.08
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTD07N04H8
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=11A
Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=9A
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
40V
67A
42.4A
14A
11.2A
4.7mΩ(typ)
8.0mΩ(typ)
Symbol
MTD07N04H8
Outline
Pin 1
DFN5×6
GGate DDrain SSource
Ordering Information
Device
MTD07N04H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTD07N04H8
CYStek Product Specification

1 page




MTD07N04H8 pdf
CYStech Electronics Corp.
Spec. No. : C140H8
Issued Date : 2015.04.08
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1000
100
Ciss 1.2
ID=1mA
1
C os
0.8
Crss ID=250μA
0.6
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
1000
100
10
Maximum Safe Operating Area
RDS(ON)
Limit
100μ s
1ms
10ms
100ms
1s
1
TC=25°C, Tj=150°, VGS=10V
RθJC=2.2°C/W, Single Pulse
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
8
6
4
2 VDS=20V
ID=16A
0
0 4 8 12 16 20 24 28 32
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
70
60
50
40
30
20
10 VGS=10V, RθJC=2.2°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTD07N04H8
CYStek Product Specification

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