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PDF MTD070P15J3 Data sheet ( Hoja de datos )
| Número de pieza | MTD070P15J3 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTD070P15J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C985J3
Issued Date : 2015.12.07
Revised Date : 2016.02.02
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTD070P15J3
BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-5.2A
RDS(ON)@VGS=-4.5V, ID=-5A
-150V
-21A
-3.7A
66mΩ(typ)
74mΩ(typ)
Features
Single Drive Requirement
Low On-resistance
Fast switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTD070P15J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTD070P15J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD070P15J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C985J3
Issued Date : 2015.12.07
Revised Date : 2016.02.02
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Coss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=-1mA
0.8
100
10
0
f=1MHz
Crss
10 20
-VDS, Drain-Source Voltage(V)
30
0.6
0.4 ID=-250μA
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1ms
10ms
100ms
1
TC=25°C, Tj=175°C,
VGS=-10V, RθJC=1.6°C/W,
single pulse
1s
DC
0.1
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
Gate Charge Characteristics
10
8 VDS=-75V
6 VDS=-30V
4
VDS=-120V
2
ID=-5.2A
0
0 10 20 30 40 50 60 70 80
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
25
20
15
10
5 VGS=-10V, Tj(max)=175°C,
RθJC=1.6°C/W, single pulse
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
80
70
60
50
40
30
20
10
0
0
Typical Transfer Characteristics
VDS=-10V
2468
-VGS, Gate-Source Voltage(V)
10
MTD070P15J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTD070P15J3.PDF ] | |
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