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PDF MTD06N04Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTD06N04Q8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C892Q8
Issued Date : 2013.01.28
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTD06N04Q8 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=10A
VGS=4.5V, ID=8A
40V
15A
6mΩ
10mΩ
Description
The MTD06N04Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Symbol
MTD06N04Q8
Outline
Pin 1
SOP-8
G：Gate
D：Drain
S：Source
MTD06N04Q8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C892Q8
Issued Date : 2013.01.28
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
100
Ciss
C oss
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
-60
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
10
VDS=20V
8 ID=15A
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
100
RDSON
Limited
100μs
10
1
0.1
TA=25°C, Tj=150°C
0.01 VGS=10V, RθJA=75°C/W
Single Pulse
0.001
0.01
\
0.1 1 10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
1s
DC
100
Maximum Drain Current vs JunctionTemperature
20
16
12
8
4
TA=25°C, VGS=10V, RθJA=40°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTD06N04Q8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTD06N04Q8.PDF ] | |
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