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PDF MTB5D0P03Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTB5D0P03Q8 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB5D0P03Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03Q8 BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-4.5V, TA=25°C
ID@VGS=-10V, TC=25°C
ID@VGS=-4.5V, TC=25°C
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free and halogen-free package
RDSON@VGS=-10V, ID=-20A
RDSON@VGS=-4.5V, ID=-17A
-30V
-20A
-16A
-28A
-22A
3.0mΩ(typ)
4.2mΩ(typ)
Equivalent Circuit
MTB5D0P03Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTB5D0P03Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB5D0P03Q8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C965Q8
Issued Date : 2014.12.03
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Crss
100
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
Normalized Threshold Voltage vs Junction
Tempearture
1.6
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μ A
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-20V
8 VDS=-15V
6 VDS=-10V
0.1
0.01
0.001
0.001
1000
100
VDS=-5V
Pulsed
TA=25°C
0.01 0.1 1 10
-ID, Drain Current(A)
Maximum Safe Operating Area
100
100μ s
10
1
0.1 TA=25°C, Tj=150°C, VGS=-10V
θJA=40°C/W, Single Pulse
0.01
0.01
0.1 1
10
-ID, Drain-Source Voltage(V)
1ms
10ms
100ms
1s
DC
100
4
2
ID=-20A
0
0 20 40 60 80 100 120
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
25
20
15
10
5
TA=25°C, VGS=-10V, RθJA=40°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB5D0P03Q8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB5D0P03Q8.PDF ] | |
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