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PDF MTB020N06KH8 Data sheet ( Hoja de datos )
| Número de pieza | MTB020N06KH8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB020N06KH8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB020N06KH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=8A
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• Pb-free lead plating and Halogen-free package
RDS(ON)@VGS=4.5V, ID=6A
RDS(ON)@VGS=4V, ID=4A
60V
42A
7.8A
12.2mΩ(typ)
15.6mΩ(typ)
17.6mΩ(typ)
Symbol
MTB020N06KH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB020N06KH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020N06KH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
Page No. : 5/ 10
Typical Characteristics
100
90
80
70
60
50
40
30
20
10
0
0
Typical Output Characteristics
10V,9V,8V,7V,6V,5V
4.5V
4V
3.5V
VGS=3V
2468
VDS, Drain-Source Voltage(V)
10
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4V
10
VGS=4.5V
VGS=10V
1.0
Tj=25°C
0.8
0.6 Tj=150°C
0.4
1
0.1
1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80 ID=8A
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.0
VGS=10V, ID=8A
RDS(ON)@Tj=25°C : 12.2mΩ typ.
1.6
1.2
0.8 VGS=4.5V, ID=6A
RDS(ON)@Tj=25°C : 15.6mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB020N06KH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTB020N06KH8.PDF ] | |
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