|
|
PDF MTA50N15J3 Data sheet ( Hoja de datos )
| Número de pieza | MTA50N15J3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTA50N15J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C957J3
Issued Date : 2016.07.26
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTA50N15J3
BVDSS
ID@TC=25°C, VGS=10V
150V
27A
RDS(ON)@VGS=10V, ID=15A 44.3 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=10A 43.0 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTA50N15J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTA50N15J3-0-T3-X
Package
TO-252
(Pb-free lead plating package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTA50N15J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C957J3
Issued Date : 2016.07.26
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2 ID=1mA
1
0.8
0.6
0.4 ID=250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
1000
Gate Charge Characteristics
10
100 RDS(ON)
Limited
10
1
TC=25°C, Tj=150°, VGS=10V
RθJC=1.5°C/W, Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
30
25
20
15
10
5 VGS=10V, RθJC=1.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
8 VDS=75V
6 VDS=30V
4
VDS=120V
2
ID=15A
0
0 10 20 30 40 50 60 70 80
Total Gate Charge---Qg(nC)
Single Pulse Maximum Power Dissipation
3000
2500
TJ(MAX)=175°C
TC=25°C
2000 RθJC=1.5°C/W
1500
1000
500
0
0.001
0.01
0.1 1 10
Pulse Width(s)
100 1000
MTA50N15J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTA50N15J3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTA50N15J3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |