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PDF AP4028EH Data sheet ( Hoja de datos )

Número de pieza AP4028EH
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP4028EH Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP4028EH
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
ˑ Low On-resistance
ˑ Simple Drive Requirement
ˑ Fast Switching Characteristic
ˑ RoHS Compliant & Halogen-Free
ň
Ņ
Ŕ
Description
AP4028 series are from Advanced Power innovated design and silicon
process technology to achieve the
switching performance. It provides
lowest possible on-resistance
the designer with an extreme
aenffdicˎifeanstt
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance.
BVDSS
RDS(ON)
ID
30V
9mȟ
45A
G
D
S
TO-252(H)
Absolute Maximum Ratings
.
Symbol
Parameter
VDS
VGS
ID@TC=25ɗ
ID@TC=100ɗ
IDM
PD@TC=25ɗ
PD@TA=25ɗ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V, (Chip)
Drain Current, VGS @ 10V, (Chip)
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
45
28
100
29.7
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
ɗ
ɗ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
4.2
62.5
Units
ɗ/W
ɗ/W
1
201407292

1 page




AP4028EH pdf
AP4028EH
2
I D =1mA
1.6
1.2
0.8
0.4
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
40
30
20
10
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
500
400
V GS =3.0V
300
T j =25 o C
200
4.0V
4.5V
100
V GS =3.5V
5.0V
V GS =10V
0
0 10 20 30 40 50
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
.
5

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