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PDF MTE015N15RE3 Data sheet ( Hoja de datos )
| Número de pieza | MTE015N15RE3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE015N15RE3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C838E3
Issued Date : 2016.06.13
Revised Date : 2016.06.23
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE015N15RE3
BVDSS
ID@VGS=10V, TC=25°C
Features
RDS(ON)@VGS=10V, ID=30A
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
150V
90A
16mΩ (typ)
Symbol
MTE015N15RE3
Outline
TO-220
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
Package
Shipping
MTE015N15RE3-0-UB-X
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE015N15RE3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C838E3
Issued Date : 2016.06.13
Revised Date : 2016.06.23
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
100 C oss 0.8
10 Crss
0.6
0.4 ID=250μA
1
0 10 20 30 40 50 60 70 80
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=75V
8
6
VDS=120V
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDS(ON)
100 Limited
10μs
100μs
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=0.4°C/W
single pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
2
ID=85A
0
0 7 14 21 28 35 42 49 56 63 70
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
100
90
80
70
60
50
40
30
20
VGS=10V, RθJC=0.4°C/W
10
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE015N15RE3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTE015N15RE3.PDF ] | |
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