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PDF MTE015N10QH8 Data sheet ( Hoja de datos )
| Número de pieza | MTE015N10QH8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE015N10QH8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE015N10QH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=20A
100 V
39 A
8.8A
12.6 mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
MTE015N10QH8
G：Gate
D：Drain
S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTE015N10QH8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTE015N10QH8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C168H8
Issued Date : 2016.06.02
Revised Date :
Page No. : 5/10
Typical Characteristics
Typical Output Characteristics
160
10V
120
9V
8V
80 7V
40 6V
VGS=4.5V 5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=6V
VGS=10V
1
0.8
0.6
0.4
Tj=25°C
Tj=150°C
10
0.01
0.1 1
10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
80
70
ID=20A
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4 VGS=10V, ID=20A
2
1.6
1.2
0.8
0.4 RDS(ON)@Tj=25°C :12.6mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTE015N10QH8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTE015N10QH8.PDF ] | |
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