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Número de pieza | MTE080N15KJ3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTE080N15KJ3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE080N15KJ3
Spec. No. : C949J3
Issued Date : 2015.11.25
Revised Date :
Page No. : 1/ 9
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD Protected Gate
• Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=10A
150V
14A
3.2A
80 mΩ(typ)
Symbol
MTE080N15KJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
MTE080N15KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE080N15KJ3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C949J3
Issued Date : 2015.11.25
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1
ID=1mA
C oss
100
10
0
100
f=1MHz
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
10
1
VDS=10V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
100
RDS(ON)
Limited
10μs
100μs
10 1ms
10ms
1
TC=25°C, Tj=150°C
VGS=10V,RθJC=2.5°C/W
Single Pulse
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=30V
8
VDS=75V
6 VDS=120V
4
2
ID=14A
0
0 4 8 12 16 20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
15
12
9
6
3 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTE080N15KJ3
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTE080N15KJ3.PDF ] |
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