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PDF MTE05N10FP Data sheet ( Hoja de datos )
| Número de pieza | MTE05N10FP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTE05N10FP (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE05N10FP BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V
109A
5.9mΩ
6.2mΩ
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
MTE05N10FP
Outline
TO-220FP
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTE05N10FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE05N10FP
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
100
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
0.8
0.6
0.4 ID=250μA
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8 ID=20A
6
4
2
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDS(ON)
Limit
100
10μs
100μ s
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=0.75°C/W
single pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
0
0 20 40 60 80 100 120
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
140
120 Silicon limit
100
80
60
40
Package limit
20
VGS=10V, RθJC=0.75°C/W
0
0 25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE05N10FP
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTE05N10FP.PDF ] | |
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