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Número de pieza | MTE05N10E3 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTE05N10E3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C928E3
Issued Date : 2013.11.04
Revised Date : 2013.11.12
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE05N10E3 BVDSS
ID
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V
140A
5.9mΩ
6.2mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTE05N10E3
Outline
TO-220
G:Gate
D:Drain
S:Source
GDS
Ordering Information
Device
MTE05N10E3-0-UB-S
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE05N10E3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C928E3
Issued Date : 2013.11.04
Revised Date : 2013.11.12
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
100000
Threshold Voltage vs Junction Tempearture
1.4
10000
1000
Ciss
C oss
Crss
1.2
1
0.8
0.6
ID=1mA
ID=250μA
100
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8 ID=20A
6
4
2
0
0 20 40 60 80 100 120
Total Gate Charge---Qg(nC)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limit
10μs
100μs
10
1 TC=25°C, Tj=175°C,
VGS=10V,RθJC=0.45°C/W
single pulse
1ms
10ms
100ms
DC
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
160
140 Silicon limit
120
100
80
60 Package limit
40
20 VGS=10V, RθJC=0.45°C/W
0
0 25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTE05N10E3
CYStek Product Specification
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MTE05N10E3.PDF ] |
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