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PDF MRF1K50H Data sheet ( Hoja de datos )
| Número de pieza | MRF1K50H | |
| Descripción | RF Power LDMOS Transistor | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
This high ruggedness device is designed for use in high VSWR industrial,
scientific and medical applications, as well as radio and VHF TV broadcast,
sub--GHz aerospace and mobile radio applications. Its unmatched input and
output design allows for wide frequency range use from 1.8 to 500 MHz.
Typical Performance: VDD = 50 Vdc
Frequency
(MHz)
Signal Type
Pout
(W)
Gps
(dB)
D
(%)
27 CW
81.36 (1)
CW
87.5–108 (2,3)
CW
230 (4)
Pulse
(100 sec, 20% Duty Cycle)
Load Mismatch/Ruggedness
1550 CW
1400 CW
1475 CW
1500 Peak
25.9
23.0
23.3
23.7
78.3
75.0
83.4
74.0
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W)
Voltage
Result
230 (4)
Pulse
> 65:1 at all 13 Peak 50 No Device
(100 sec, 20% Phase Angles (3 dB
Degradation
Duty Cycle)
Overdrive)
1. Data from 81.36 MHz narrowband reference circuit (page 11).
2. Data from 87.5–108 MHz broadband reference circuit (page 5).
3. The values shown are the center band performance numbers across the indicated
frequency range.
4. Data from 230 MHz narrowband production test fixture (page 16).
Features
High Drain--Source Avalanche Energy Absorption Capability
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device Can Be Used Single--Ended or in a Push--Pull Configuration
Characterized from 30 to 50 V for Ease of Use
Suitable for Linear Application
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
Recommended Driver: MRFE6VS25N (25 W)
Lower Thermal Resistance Part Available: MRF1K50N
Typical Applications
Industrial, Scientific, Medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
Broadcast
– Radio broadcast
– VHF TV broadcast
Aerospace
– VHF omnidirectional range (VOR)
– HF and VHF communications
– Weather radar
Mobile Radio
– VHF and UHF base stations
Document Number: MRF1K50H
Rev. 0, 6/2016
MRF1K50H
1.8–500 MHz, 1500 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
NI--1230H--4S
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF1K50H
1
1 page  
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 7. 87.5–108 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ(A+B) = 200 mA, Pin = 7 W, CW
Frequency
Gps
D
Pout
(MHz)
(dB)
(%)
(W)
87.5 22.8 81.8 1325
98 23.3 83.4 1475
108 23.0 81.2 1410
RF Device Data
Freescale Semiconductor, Inc.
MRF1K50H
5
5 Page 
81.36 MHz NARROWBAND REFERENCE CIRCUIT
Table 9. 81.36 MHz Narrowband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ(A+B) = 150 mA, Pin = 3 W, CW
Frequency
Gps
D
Pout
(MHz)
(dB)
(%)
(W)
81.36
23.0
75.0 1400
RF Device Data
Freescale Semiconductor, Inc.
MRF1K50H
11
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet MRF1K50H.PDF ] | |
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