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PDF MIXA80W1200TED Data sheet ( Hoja de datos )
| Número de pieza | MIXA80W1200TED | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Six-Pack
XPT IGBT
Part name (Marking on product)
MIXA80W1200TED
MIXA80W1200TED
VCES = 1200 V
IC25 = 120 A
VCE(sat) = 1.8 V
25, 26
17
NTC
1
2
18
3
4
27, 28
59
6 10
7 11
8 12
15, 16
23, 24
21, 22
19, 20
13, 14
E72873
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100827d
1-7
1 page  
MIXA80W1200TED
Transistor T1 - T6
140 VGE = 15 V
120
100
IC 80
[A] 60
40
TVJ = 25°C
TVJ = 125°C
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE [V]
Fig. 1 Typ. output characteristics
140
120
100
IC 80
[A] 60
40
TVJ = 125°C
20
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
16
14
12
10
E8
[mJ] 6
RG = 10 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
4 Eoff
2
Eon
0
0 20 40 60 80 100 120 140 160
IC [A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
140
120
VGE = 15 V
17 V
19 V
13 V
11 V
100
IC 80
[A] 60
40
TVJ = 125°C
9V
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 75 A
VCE = 600 V
15
VGE 10
[V]
5
0
0 50 100 150 200 250 300
QG [nC]
Fig. 4 Typ. turn-on gate charge
10
9
8 Eoff
E
[mJ] 7
Eon
6
IC = 75 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
5
8 10 12 14 16 18 20 22 24
RG [Ω]
Fig. 6 Typ. switching energy vs. gate resistance
20100827d
5-7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MIXA80W1200TED.PDF ] | |
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