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PDF MIXA30WB1200TMI Data sheet ( Hoja de datos )
| Número de pieza | MIXA30WB1200TMI | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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XPT IGBT Module
MIXA30WB1200TMI
tentative
3~
Rectifier
Brake
Chopper
3~
Inverter
VRRM =
I DAV =
I FSM =
1600 V VCES = 1200 V VCES = 1200 V
105 A IC25 = 28 A IC25 = 43 A
320 A V =CE(sat) 1.8 V V =CE(sat) 1.8 V
6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
Part number
MIXA30WB1200TMI
P P1
T1 G1 G3 G5
L1
L2
BU
V
W
L3
T2
GB G2
G4 G6
Backside: isolated
N NB EU
EV EW
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Package: MiniPack2B
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130208
1 page  
MIXA30WB1200TMI
tentative
Package MiniPack2B
Ratings
Symbol
I RMS
Tstg
T VJ
Weight
Definition
RMS current
storage temperature
virtual junction temperature
Conditions
per terminal
min. typ. max.
-40 125
-40 150
39
M D mounting torque
2 2.2
d Spp/App
d Spb/Apb
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
6.3 5.0
11.5 10.0
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
3000
2500
Rpin-chip
resistance pin to chip
V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF
6
Tvjm max. virtual junction temperature
175
Logo
Date Code Location
yywwx
XXXXXXXXXXX
Part number
2D Data Matrix
Part number
M = Module
I = IGBT
X = XPT IGBT
A = Gen 1 / std
30 = Current Rating [A]
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = Thermistor \ Temperature sensor
MI = MiniPack2B
Unit
A
°C
°C
g
Nm
mm
mm
V
V
mΩ
°C
Ordering
Standard
Part Number
MIXA30WB1200TMI
Marking on Product
MIXA30WB1200TMI
Delivery Mode
Box
Quantity Code No.
6 511570
Temperature Sensor NTC
Symbol Definition
R25
B 25/50
resistance
temperature coefficient
Conditions
TVJ = 25°
min. typ. max. Unit
4.75
5 5.25 kΩ
3375
K
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
Rectifier
0.9
10
Brake
IGBT
1.1
86
* on die level
Brake
Diode
1.25
90
Inverter
IGBT
1.1
55
T VJ = 150°C
Inverter
Diode
1.25
V
30 mΩ
105
104
R
[]
103
102
0
25 50 75 100 125 150
TC [°C]
Typ. NTC resistance vs. temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130208
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MIXA30WB1200TMI.PDF ] | |
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