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PDF SS3413-A Data sheet ( Hoja de datos )
| Número de pieza | SS3413-A | |
| Descripción | CMOS Omnipolar High Sensitivity Micropower Hall Switch | |
| Fabricantes | SEC | |
| Logotipo |  |
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SS3413-A
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Features
− Micropower consumption for battery powered applications
− Omnipolar, output switches with absolute value of North or South pole from magnet
− Operation down to 1.6V
− High sensitivity for direct reed switch replacement applications
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
General Description
The SS3413-A Omnipolar Hall effect sensor IC is
fabricated from mixed signal CMOS technology .It
incorporates advanced chopper-stabilization tech-
niques to provide accurate and stable magnetic switch
points.
The circuit design provides an internally controlled
clocking mechanism to cycle power to the Hall ele-
ment and analog signal processing circuits. This
serves to place the high current-consuming portions
of the circuit into a “Sleep” mode. Periodically the
device is “Awakened” by this internal logic and the
magnetic flux from the Hall element is evaluated
against the predefined thresholds. If the flux density
is above or below the Bop/Brp thresholds then the
output transistor is driven to change states according-
ly. While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been op-
timized for service in applications requiring extended
operating lifetime in battery powered systems.
The output transistor of the SS3413-A will be latched
on (Bop) in the presence of a sufficiently strong
South or North magnetic field facing the marked side
of the package. The output will be latched off (Brp) in
the absence of a magnetic field.
Applications
− Solid state switch
− Handheld Wireless Handset Awake Switch
− Lid close sensor for battery powered devices
− Magnet proximity sensor for reed switch replacement in low duty cycle applications
1 V3.10 Nov 1, 2013
1 page  
SS3413-A
CMOS Omnipolar High Sensitivity Micropower Hall Switch
ESD Protection
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7
Parameter
ESD Voltage
Symbol
VESD
Limit Values
Min Max
±4
Unit
kV
Notes
Performance Characteristics
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage,
which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique
possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be
placed in less space. The small chip size also contributes to lower physical stress and less power consumption.
5 V3.10 Nov 1, 2013
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SS3413-A.PDF ] | |
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