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PDF IXXH40N65B4 Data sheet ( Hoja de datos )
| Número de pieza | IXXH40N65B4 | |
| Descripción | 650V IGBTs | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX4TM
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
IXXH40N65B4
VCES = 650V
IC110 = 40A
VCE(sat) 2.0V
tfi(typ) = 54ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 5
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
120 A
40 A
240 A
ICM = 80
@VCE VCES
10
A
μs
455
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 5-30kHz Switching
Square RBSOA
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
4.0 6.5 V
10 A
500 A
100 nA
1.50
1.78
2.00 V
V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100526A(12/14)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
3.0
2.6
Eoff Eon - - - -
TJ = 150ºC , VGE = 15V
VCE = 400V
2.2
I C = 80A
14
12
10
1.8 8
1.4 6
1.0
I C = 40A
4
0.6 2
0.2
5
0
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.8
1.6
Eoff Eon - - - -
RG = 5ΩVGE = 15V
VCE = 400V
1.4
I C = 80A
7
6
5
1.2 4
1.0 3
0.8
I C = 40A
2
0.6 1
0.4
25
50 75 100
TJ - Degrees Centigrade
125
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
220 110
200 t f i td(off) - - - - 100
RG = 5Ω, VGE = 15V
180
VCE = 400V
90
160 80
140
120 TJ = 150ºC
100
TJ = 25ºC
70
60
50
80 40
60 30
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
IXXH40N65B4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1.6
1.4
Eoff Eon - - - -
RG = 5ΩVGE = 15V
VCE = 400V
1.2
TJ = 150ºC
7
6
5
1.0 4
0.8 3
TJ = 25ºC
0.6 2
0.4 1
0.2 0
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
100 550
95 t f i
td(off) - - - -
90 TJ = 150ºC, VGE = 15V
VCE = 400V
85
80
I C = 40A
500
450
400
350
75 300
70 250
65 200
60 I C = 80A
55
150
100
50
5
50
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
120 180
t f i td(off) - - - -
100 RG = 5Ω, VGE = 15V
VCE = 400V
160
80 140
60 120
I C = 40A, 80A
40 100
20
25
50 75 100 125
TJ - Degrees Centigrade
80
150
© 2014 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXXH40N65B4.PDF ] | |
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