|
|
PDF IXXA30N65C3HV Data sheet ( Hoja de datos )
| Número de pieza | IXXA30N65C3HV | |
| Descripción | 650V IGBTs | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXXA30N65C3HV (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
IXXA30N65C3HV
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
650V
30A
2.2V
32ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10Ω
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82Ω, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Maximum Ratings
650 V
650 V
±20 V
±30 V
52 A
30 A
113 A
20 A
250 mJ
ICM = 48
≤@VCE VCES
10
A
μs
230
-55 ... +175
175
-55 ... +175
300
260
2.5
W
°C
°C
°C
°C
°C
g
TO-263
G
E
D (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Optimized for 20-60kHz Switching
z Square RBSOA
z Avalanche Capability
z Short Circuit Capability
z High Voltage Package
Advantages
z High Power Density
z 175°C Rated
z Extremely Rugged
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
24A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
650 V
3.0 5.5 V
10 μA
250 μA
±100 nA
1.85
2.30
2.20 V
V
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100525A(04/13)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.0
0.9 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
0.8 VCE = 400V
I C = 48A
0.7
0.6
0.5
0.4 I C = 24A
0.3
0.2
10 20 30 40 50 60 70
RG - Ohms
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.8
Eoff Eon - - - -
0.7 RG = 10Ω , VGE = 15V
VCE = 400V
0.6
3.5
3.0
2.5
0.5 I C = 48A
0.4
2.0
1.5
0.3
0.2 I C = 24A
1.0
0.5
0.1
25
50 75 100
TJ - Degrees Centigrade
125
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
140 120
t f i td(off) - - - -
120
RG = 10Ω , VGE = 15V
110
VCE = 400V
100 100
80
TJ = 150ºC
90
60 80
40 70
20
TJ = 25ºC
60
0 50
10 15 20 25 30 35 40 45 50
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXXA30N65C3HV
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.7
Eoff Eon - - - -
0.6 RG = 10Ω , VGE = 15V
VCE = 400V
0.5
TJ = 150ºC
2.4
2.0
1.6
0.4 1.2
0.3
TJ = 25ºC
0.8
0.2 0.4
0.1 0.0
12 16 20 24 28 32 36 40 44 48
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
110
t f i td(off) - - - -
100 TJ = 150ºC, VGE = 15V
VCE = 400V
90
270
240
210
80
I C = 24A
70
180
150
60
I C = 48A
50
120
90
40 60
10 20 30 40 50 60 70 80
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
100 100
t f i td(off) - - - -
80
RG = 10Ω , VGE = 15V
VCE = 400V
90
60
I C = 48A
80
40 70
I C = 24A
20 60
0 50
25 50 75 100 125 150
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXXA30N65C3HV.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXXA30N65C3HV | 650V IGBTs | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |