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PDF IXTR140P10T Data sheet ( Hoja de datos )
| Número de pieza | IXTR140P10T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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TrenchPTM
Power MOSFET
IXTR140P10T
P-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
≤RDS(on)
-100V
- 110A
11mΩ
ISOPLUS247
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
-100
-100
±15
±25
- 110
- 400
-140
2.5
V
V
V
V
A
A
A
J
10
270
- 55 ... +150
150
- 55 ... +150
300
260
2500
V/ns
W
°C
°C
°C
°C
°C
V~
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = - 70A, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.0
- 4.0 V
±100 nA
- 10 μA
-150 μA
11 mΩ
G
DS
Isolated Tab
G = Gate D = Drain
S = Source
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500V~ Electrical Isolation
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS100376B(01/13)
1 page  
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
50
RG = 1Ω, VGS = -10V
VDS = - 50V
40
I D = -140A
30
I D = - 70A
20
IXTR140P10T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
50
RG = 1Ω, VGS = -10V
VDS = - 50V
40
TJ = 125ºC
30
TJ = 25ºC
20
10
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
200
180 t r
td(on) - - - -
TJ = 125ºC, VGS = -10V
160 VDS = - 50V
320
280
240
140 200
120
I D = -140A
100
160
120
80
I D = - 70A
80
60 40
40 0
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
32 140
t f td(off) - - - -
30 RG = 1Ω, VGS = -10V
VDS = - 50V
120
28 100
TJ = 125ºC
26 TJ = 25ºC 80
24 60
22 40
-50 -60 -70 -80 -90 -100 -110 -120 -130 -140
ID - Amperes
10
-50 -60 -70 -80 -90 -100 -110 -120 -130 -140
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
40 140
t f td(off) - - - -
35 RG = 1Ω, VGS = -10V
VDS = - 50V
I D = - 70A
120
30 100
I D = - 140A
25 80
I D = - 70A
20 60
15 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
180 360
160 t f
td(off) - - - -
TJ = 125ºC, VGS = -10V
140 VDS = - 50V
120 I D = - 70A
320
280
240
100 200
80 160
60
I D = -140A
120
40 80
20 40
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTR140P10T.PDF ] | |
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