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PDF IXTR102N65X2 Data sheet ( Hoja de datos )
| Número de pieza | IXTR102N65X2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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X2-Class
Power MOSFET
(Electrically Isolated Tab)
Advance Technical Information
IXTR102N65X2
VDSS =
ID25 =
RDS(on)
650V
54A
33m
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
650
650
30
40
V
V
V
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
54
204
25
3
330
50
-55 ... +150
150
-55 ... +150
A
A
A
J
W
V/ns
C
C
C
Maximum Lead Temperature for Soldering 300 °C
1.6 mm (0.062in.) from Case for 10s
260 °C
50/60 Hz, 1 Minute
2500 V
Mounting Force
20..120/4.5..27
N/lb
5g
ISOPLUS247
E153432
G
DS
Isolated Tab
G = Gate D = Drain
S = Source
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
LAovwalaQnGche
Rated
Low Package Inductance
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 51A, Note 1
Characteristic Values
Min. Typ. Max.
650 V
3.0 5.0 V
100 nA
25 A
500 A
33 m
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2015 IXYS CORPORATION, All Rights Reserved
DS100681(8/15)
1 page  
IXTR102N65X2
Fig. 13. Forward-Bias Safe Operating Area
1000
Fig. 14. Maximum Transient Thermal Impedance
1
RDS(on) Limit
100
25µs
0.1
10
1
0.1
1
TJ = 150ºC
TC = 25ºC
Single Pulse
10 100
VDS - Volts
100µs
1ms
0.01
10ms
0.001
1,000
0.00001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_102N65X2(X8-R4T50) 8-05-15-B
5 Page | ||
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