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PDF IXTN120N25 Data sheet ( Hoja de datos )
| Número de pieza | IXTN120N25 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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High Current
MegaMOSTMFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTK 120N25
VDSS
ID25
RDS(on)
=
=
=
250 V
120 A
20 mΩ
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
250 V
250 V
±20 V
±30 V
120 A
75 A
480 A
90 A
80 mJ
4.0 J
10 V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
730
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Internationalstandardpackage
•Fast switching times
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VPuGSlse=te1s0t,Vt,≤ID3=000.m5 sID,2d5 uty cycle d ≤ 2%
Characteristic Values
Min. Typ.
Max.
250 V
2.0 4.0 V
±200 nA
50 µA
3 mA
20 mΩ
Applications
• Motorcontrols
• DC choppers
• Switched-mode power supplies
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS98879D(11/03)
1 page  
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1
IXTK 120N25
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
10 100
Puls e W idth - millis ec onds
1000
© 2003 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTN120N25.PDF ] | |
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