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PDF STP4435 Data sheet ( Hoja de datos )

Número de pieza STP4435
Descripción -30V P-Channel Enhancement Mode MOSFET
Fabricantes Semtron 
Logotipo Semtron Logotipo



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STP4435
DESCRIPTION
-30V P-Channel Enhancement Mode MOSFET
FEATURE
The STP4435 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent RDS(ON).
This device is suitable for use as a load switch or in
PWM and gate charge for most of the synchronous
buck converter applications.
STP4435M-TRG ROHS Compliant This is Halogen
Free
-30V/-10.0A, RDS(ON) =15m(typ)@VGS =-10V
-30V/-7.0A, RDS(ON) =20m(typ)@VGS =-4.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and maximum DC
current capability
SOP-8 package design
APPLICATIONS
High Frequency Point-of-Load Synchronous
Newworking DC-DC Power System
Load Switch
PIN CONFIGURATION
DDDD
S SSG
SOP-8
Top View
PART NUMBER INFORMATION
STP 4435 M - TR G
a b c de
D
G
S
a : Company name.
b : Product Serial number.
c : Package code
d : Handling code
e : Green produce code
STP4435 Rev.2.2
Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com

1 page




STP4435 pdf
STP4435
TYPICAL CHARACTERISTICS (25Unless Note)
3000
Capacitance
Source Drain Diode Forward
100
2400
1800
1200
Ciss
10
TJ=125°C
TJ=25°C
600 Coss
0 Crss
0 5 10 15 20 25
-VDS-Drain Source Voltage(V)
30
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD-Source Drain Voltage(V)
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Power Dissipation
20 40 60 80 100 120 140 160
TJ-Junction Temperature(°C)
On Resistance VS Gate Source Voltage
25
20
15
10
0
24 68
VGS-Gate Source Voltage(V)
10
Thermal Transient Impedance
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01
1
0.1
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration(Sec)
100 1000
STP4435 Rev.2.2
Copyright © Semtron Microtech Corp.
5
www.semtron-micro.com

5 Page










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