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PDF TSP10N60C Data sheet ( Hoja de datos )
| Número de pieza | TSP10N60C | |
| Descripción | 600V Heatsink N-Channel Type Power MOSFET | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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TSP10N60C
®
TSP10N60C
Pb Free Plating Product
Pb
10.3A,600V Heatsink N-Channel Type Power MOSFET
Features
■ RDS(on) (Max 0.75 Ω )@VGS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability
■ High ruggedness
■ 100% Avalanche Tested
1. Gate {
{ 2. Drain
●
◀▲
●
●
{ 3. Source
BVDSS = 600V
RDS(ON) = 0.75 ohm
ID = 10.3A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220 pkg is well suited for
adaptor power unit and small power inverter application.
Absolute Maximum Ratings
TO-220
23
1
Symbol
Parameter
VDSS
ID
Drain to Source Voltage
Continuous Drain Current(@TC = 25 °C)
Continuous Drain Current(@TC = 100 °C)
IDM
VGS
EAS
EAR
dv/dt
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Value
TSP10N60C TSF10N60C
600
Units
V
10.3
10.3*
A
6.5 6.5* A
(Note 1)
(Note 2)
(Note 1)
(Note 3)
41.2
41.2*
±30
822
15.8
5.0
A
V
mJ
mJ
V/ns
158 57 W
1.27
0.45
W/°C
- 55 ~ +150
°C
300 °C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Maximum value
TSP10N60C TSF10N60C
0.79
2.21
62.5
62.5
Units
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/7
http://www.thinkisemi.com/
1 page  
TSP10N60C
Fig 13. Transient Thermal Response Curve(TO220)
100
D = 0 .5
0.2
1 0 -1
0.1
0.05
0.02
0.01
1 0 -2
single pulse
*. Notes :
1. Z? JC(t) = 0.79OC/W M ax.
2. D uty Factor, D =t1/t2
3. T JM - T C = P DM * Z ? JC(t)
t1
t2
1 0 -3
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, Square W ave Pulse Duration [sec]
101
Fig 14. Transient Thermal Response Curve(TO220F)
101
100 D=0.5
0.2
0.1
0.05
1 0 -1
0.02
0.01
1 0 -2
single pulse
*. Notes :
1. Z? JC(t) = 2.21OC /W M ax.
2. D uty Factor, D =t1/t2
3. TJM - TC = PDM * Z? JC(t)
t1
t2
1 0 -3
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, Square W ave Pulse Duration [sec]
101
®
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 5/7
http://www.thinkisemi.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSP10N60C.PDF ] | |
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