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Número de pieza | MBR2030CT | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR2030CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
Schottky Barrier Rectifier
FEATURES
·Dual Rectifier Conduction, Positive Center Tap
·Metal Silicon Junction, Majority Carrier Conduction
·Low Power Loss/High Efficiency
·High Current Capability, Low Forward Voltage Drop
·High Surge Capacity
·Guarding for Overvoltage protection
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·High Temperature Soldering Guaranteed:
250℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
30 V
21 V
IF(AV)
IFSM
IRRM
Average Rectified Forward Current
TC= 125℃
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
Peak Repetitive Reverse Current
(2.0μs, 1.0kHz)
20
150
1.0
A
A
A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt
Voltage Rate of Change (Rated VR)
1000 V/μs
Product Specification
MBR2030CT
isc website:www.iscsemi.cn
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR2030CT.PDF ] |
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MBR2030CT | 20A SCHOTTKY BARRIER RECTIFIER | Diodes Incorporated |
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