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PDF MBR2030CT Data sheet ( Hoja de datos )

Número de pieza MBR2030CT
Descripción Schottky Barrier Rectifier ( Diode )
Fabricantes Inchange Semiconductor 
Logotipo Inchange Semiconductor Logotipo



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No Preview Available ! MBR2030CT Hoja de datos, Descripción, Manual

INCHANGE Semiconductor
Schottky Barrier Rectifier
FEATURES
·Dual Rectifier Conduction, Positive Center Tap
·Metal Silicon Junction, Majority Carrier Conduction
·Low Power Loss/High Efficiency
·High Current Capability, Low Forward Voltage Drop
·High Surge Capacity
·Guarding for Overvoltage protection
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·High Temperature Soldering Guaranteed:
250Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
30 V
21 V
IF(AV)
IFSM
IRRM
Average Rectified Forward Current
TC= 125
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
Peak Repetitive Reverse Current
(2.0μs, 1.0kHz)
20
150
1.0
A
A
A
TJ Junction Temperature
-65~150
Tstg Storage Temperature Range
-65~175
dv/dt
Voltage Rate of Change (Rated VR)
1000 V/μs
Product Specification
MBR2030CT
isc websitewww.iscsemi.cn
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