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PDF HVV0405-175 Data sheet ( Hoja de datos )
| Número de pieza | HVV0405-175 | |
| Descripción | Power Transistor | |
| Fabricantes | HVVi | |
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The innovative Semiconductor Company!
HVV0405-175 High Voltage, High Ruggedness
TM UHF Pulsed Power Transistor
400-500 MHz, 300μs Pulse, 10% Duty Cycle
For UHF band, Weather and Long Range Radar Applications
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the UHF
band including weather and long range radar applications.
MODE
FREQUENCY
(MHz)
VDD
(V)
IDQ Power GAIN EFFICIENCY IRL
(mA) (W) (dB)
(%) (dB)
Class AB
450
50 50 175 25
55 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
RF pulse conditions of pulse width = 300μs and pulse period = 3ms.
DESCRIPTION
The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for
pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology
produces over 175W of pulsed output power while offering high gain,high efficiency,and ease of matching
with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV0405-175
Demo Kit Part Number: HVV0405-175-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS10A
12/11/08
1
1 page  
The innovative Semiconductor Company!
HVV0405-175 High Voltage, High Ruggedness
HVV0405-175 HighTM VoltagUeH,FHPuiglshedRPouwgegreTdrannessisstor
UHF Pulsed Power Transis4to00r-500 MHz, 300μs Pulse, 10% Duty Cycle
400-500 MHz, 300µs Pulse,Fo1r0U%HFDbuatnyd,CWyecalteher and Long Range Radar Applications
FoPrAUCKHAFGEbaDInMd,EWNSeIaOthNeSr and Long Range Radar Applications
PACKAGE DIMENSIONS
% Duty
DRAIN
GATE
SOURCE
Note: Drawing is not actual size.
Note: Drawing is not actual size.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published
in this document at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof. Information in this document is believed to
be accurate and reliable. However, HVVi does not give any representations or warranties, either
express or implied, as to the accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. Use of HVVi products as critical components in
life support systems is not authorized. No licenses, either express or implied, are conveyed under
any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are
trademarks of HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, HVVi does not give any representations or warranties, either express or implied, as to
the accuracy or completeness of such information and shall have no liability for the consequences of use
of such information. Use of HVVi products as critical components in life support systems is not
HaVuVtihSoermiziceodn.dNucotolrisc,eIncs.es, either express oIrSOim9p0l0i1e:d2,00ar0eCceortnifvieedyed under any HVVi intellectuaElGp-0r1o-pDeSr1t0yA
10r2ig3h5tSs.,5i1nsctlSutd. Siunigtea1n0y0 patent rigThetls: (.86T6h) e42H9-VHVVVii n(4a8m84e) oanr vdisliot gwowwar.hevtvria.cdoemmarks of HVVi Semicond12u/c1t1o/r0s8,
PhInoecn. ix, AZ. 85044
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
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