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PDF MMBR941L Data sheet ( Hoja de datos )
| Número de pieza | MMBR941L | |
| Descripción | Silicon NPN RF Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR941L
DESCRIPTION
·Low Noise
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in high gain , low noise small-signal
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
10 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC= 75℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 V
50 mA
0.25 W
150 ℃
-55~150
℃
isc website：www.iscsemi.cn
1
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR941L
VCE = 1 V, IC = 1 mA
f (MHz)
︱S11︱
100 0.95
200 0.93
500 0.81
900 0.63
1000
0.60
1500
0.51
2000
0.46
3000
0.46
∠S11
–13
–27
–62
–101
–110
–144
–173
–138
︱S21︱
3.37
3.27
2.85
2.21
2.08
1.59
1.28
0.95
∠S21
169
158
128
101
96
73
56
30
︱S12︱
0.03
0.06
0.12
0.15
0.15
0.16
0.16
0.19
∠S12
81
73
52
37
34
27
29
44
︱S22︱
0.99
0.98
0.86
0.73
0.71
0.64
0.61
0.60
∠S22
–6.2
–12
– 26
–38
–40
–49
–58
–75
VCE = 6 V, IC = 5 mA
f (MHz)
︱S11︱
100 0.82
200 0.75
400 0.55
600 0.42
800 0.33
1000
0.28
1500
0.25
2000
0.16
2500
0.21
3000
0.18
3500
0.30
400 0.29
∠S11
–25
–47
–79
–98
–114
–129
–155
176
151
122
108
91
︱S21︱
14.6
12.6
9.2
6.9
5.3
4.5
3.1
2.4
2.0
1.7
1.5
1.4
∠S21
159
142
120
106
97
90
77
66
57
50
42
37
︱S12︱
0.02
0.04
0.05
0.07
0.08
0.09
0.13
0.16
0.20
0.23
0.27
0.32
∠S12
77
68
61
60
61
62
67
68
69
68
66
64
︱S22︱
0.94
0.85
0.69
0.60
0.56
0.52
0.51
0.51
0.48
0.48
0.45
0.42
∠S22
–13
–22
–31
–32
–33
–33
–37
–36
–40
–44
–46
–53
isc website：www.iscsemi.cn
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MMBR941L.PDF ] | |
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