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Número de pieza | CM350DU-5F | |
Descripción | HIGH POWER SWITCHING USE INSULATED TYPE | |
Fabricantes | Mitsubishi Electric Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CM350DU-5F (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
A
B
E
K(4 - Mounting
Holes)
D
C
F
CM
H
J
H
3 - M6 NUTS
RRG
MPMPM
L
TAB #110, t = 0.5
N
Q
C2E1
E2
Outline Drawing and Circuit Diagram
Dimensions Inches
A 4.33
B 3.66±0.01
C 3.15
D 2.44±0.01
E 0.55
F 0.86
G 0.94
H 0.24
Millimeters
110.0
93.0±0.25
80.0
62.0±0.25
14.0
21.75
24.0
6.0
G2
E2
C1
E1
G1
Dimensions Inches
J 0.59
K 0.26 Dia.
L 1.14 +0.04/-0.02
M 0.71
N 0.33
P 0.28
Q 0.83
R 0.98
Millimeters
15.0
6.5 Dia.
29 +1.0/-0.5
18.0
8.5
7.0
21.0
25.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having
a reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ UPS
ٗ Forklift
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM350DU-5F is a
250V (VCES), 350 Ampere Trench
Gate Design Dual IGBT Module.
Type
CM
Current Rating
Amperes
350
VCES
Volts (x 50)
5
Sep.1998
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CM350DU-5F.PDF ] |
Número de pieza | Descripción | Fabricantes |
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