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PDF CPC1986J Data sheet ( Hoja de datos )

Número de pieza CPC1986J
Descripción Power Relay
Fabricantes IXYS 
Logotipo IXYS Logotipo



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INTEGRATED CIRCUITS DIVISION
Characteristics
Parameter
Blocking Voltage
Load Current, TA=25°C:
With 5°C/W Heat Sink
No Heat Sink
On-Resistance (max)
Thermal Resistance,
Junction-to-Case, JC
Rating
1000
1.6
0.65
3
0.35
Units
VP
Arms
°C/W
Features
1.6Arms Load Current with 5°C/W Heat Sink
Low 3On-Resistance
1000VP Blocking Voltage
2500Vrms Input/Output Isolation
Low Thermal Resistance: JC = 0.35 °C/W
Isolated, Low Thermal Impedance Ceramic Pad for
Heat Sink Applications
Low Drive Power Requirements
Arc-Free With No Snubbing Circuits
No EMI/RFI Generation
Machine Insertable, Wave Solderable
Applications
Industrial Controls / Motor Control
Robotics
Medical Equipment—Patient/Equipment Isolation
Instrumentation
Multiplexers
Data Acquisition
Electronic Switching
I/O Subsystems
Meters (Watt-Hour, Water, Gas)
Transportation Equipment
Aerospace/Defense
Approvals
UL 508 Certified Component: File E69938
Pin Configuration
12
34
-+
e3
CPC1986
1000V Single-Pole, Normally Open
Power Relay
Description
IXYS Integrated Circuits Division and IXYS have
combined to bring OptoMOS® technology, reliability,
and compact size to a new family of high-power Solid
State Relays.
As part of this family, the CPC1986 single-pole,
normally open (1-Form-A) Solid State Power Relay is
rated for up to 1.6Arms continuous load current with a
5°C/W heat sink.
The CPC1986 employs optically coupled MOSFET
technology to provide 2500Vrms of input to output
isolation. The optically coupled outputs, that use
patented OptoMOS architecture, are controlled by a
highly efficient infrared LED. The combination of low
on-resistance and high load current handling
capability makes this relay suitable for a variety of high
performance switching applications.
The unique i4-PAC package pioneered by IXYS
enables Solid State Relays to achieve the highest load
current and power ratings. This package features a
unique IXYS process in which the silicon chips are soft
soldered onto the Direct Copper Bond (DCB)
substrate instead of the traditional copper leadframe.
The DCB ceramic, the same substrate used in high
power modules, not only provides 2500Vrms isolation
but also very low junction-to-case thermal resistance
(0.35 °C/W).
Ordering Information
Part
CPC1986J
Description
i4-PAC Package (25 per tube)
Switching Characteristics
Form-A
IF
ILOAD
90%
ton
10%
toff
DS-CPC1986-R09
www.ixysic.com
1

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CPC1986J pdf
INTEGRATED CIRCUITS DIVISION
CPC1986
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
-40
Typical On-Resistance
vs. Temperature
(IF=20mA, IL=0.4A)
-20 0 20 40 60 80
Temperature (ºC)
100
1180
1160
1140
1120
1100
1080
1060
1040
1020
1000
-40
Typical Blocking Voltage
vs. Temperature
-20 0 20 40 60 80
Temperature (ºC)
100
Typical Load Current vs. Load Voltage
(IF=10mA)
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-2.0 -1.33 -0.66
0
0.66 1.33 2.0
Load Voltage (V)
0.014
Typical Leakage vs. Temperature
Measured Across Pins 1&2
(VL=1000VP)
0.012
0.010
0.008
0.006
0.004
0.002
0
-40 -20
0 20 40 60
Temperature (ºC)
80 100
Maximum Load Current
vs. Temperature with Heat Sink
(IF=20mA)
4.0
3.5
1ºC/W
3.0
2.5
2.0
1.5 5ºC/W
1.0 10ºC/W
0.5 Free Air
0.0
0
20 40 60 80
Temperature (ºC)
100
Energy Rating Curve
Free Air, No Heat Sink
12
10
8
6
4
2
0
10µs 100µs 1ms 10ms 100ms 1s
Time
10s 100s
Unless otherwise specified, all performance data was acquired without the use of a heat sink.
The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the
written specifications, please contact our application department.
5
www.ixysic.com
R09

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