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PDF CM150E3U-24H Data sheet ( Hoja de datos )
| Número de pieza | CM150E3U-24H | |
| Descripción | HIGH POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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MITSUBISHI IGBT MODULES
CM150E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
A
D
BE
T CM
S(4 - Mounting
Holes)
F
H
3 - M6 Nuts
Q QP N
G
K K KR
M
CL
C2E1
E2
E2
G2
C1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A 4.25 108.0
B 2.44
62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D
3.66±0.01
93.0±0.25
E
1.88±0.01
48.0±0.25
F 0.87 22.0
G 0.16
4.0
H 0.24
6.0
K 0.71 18.0
Dimensions Inches
L 0.87
M 0.33
N 0.10
P 0.85
Q 0.98
R 0.11
S 0.25 Dia.
T 0.6
Millimeters
22.0
8.5
2.5
21.5
25.0
2.8
6.5 Dia.
15.15
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
ode and an anode-collector con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Application:
ٗ Brake
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM150E3U-24H is a
1200V (VCES), 150 Ampere IGBT
Module.
Type
CM
Current Rating
Amperes
150
VCES
Volts (x 50)
24
Sep.1998
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CM150E3U-24H.PDF ] | |
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