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PDF BT151-1000RT Data sheet ( Hoja de datos )
| Número de pieza | BT151-1000RT | |
| Descripción | SCR | |
| Fabricantes | NXP Semiconductors | |
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BT151-1000RT
SCR
13 March 2014
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic
package intended for use in applications requiring very high bidirectional blocking voltage
capability, high junction temperature capability and high thermal cycling performance.
2. Features and benefits
• High junction operating temperature capability
• High thermal cycling performance
• Planar passivated for voltage ruggedness and reliability
• Very high bidirectional blocking voltage capability
3. Applications
• Capacitive Discharge Ignition (CDI)
• Crowbar protection
• Inrush protection
• Motor control
• Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
VRRM
repetitive peak reverse
voltage
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
Tj junction temperature
IT(RMS)
RMS on-state current half sine wave; Tmb ≤ 134 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 1000 V
- - 1000 V
- - 120 A
- - 150 °C
- - 12 A
- 2 15 mA
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1 page  
NXP Semiconductors
10
Zth(j-mb)
(K/W)
1
BT151-1000RT
SCR
003aaj936
10-1
10-2
P δ = tp
T
10-3
10-5
10-4
10-3
10-2
10-1
tp
T
t
1 10
tp (s)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 23 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 1000 V; IT = 0.1 A; Tj = 150 °C;
Fig. 11
ID
off-state current
VD = 1000 V; Tj = 150 °C
IR
reverse current
VR = 1000 V; Tj = 150 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 670 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
tgt gate-controlled turn-on ITM = 40 A; VD = 1000 V; IG = 0.1 A;
time dIG/dt = 5 A/µs; Tj = 25 °C
tq commutated turn-off VDM = 670 V; Tj = 150 °C; ITM = 20 A;
time
VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 50 V/µs; RGK = 100 Ω; (VDM = 67%
of VDRM)
BT151-1000RT
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 March 2014
Min Typ Max Unit
- 2 15 mA
- 10 40 mA
- 7 20 mA
- 1.4 1.75 V
-
0.6 1
V
0.25 0.4 -
V
- 0.5 2.5 mA
- 0.5 2.5 mA
- 300 - V/µs
- 2 - µs
- 70 - µs
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 11
5 Page 
NXP Semiconductors
12. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Limiting values .......................................................2
8 Thermal characteristics .........................................4
9 Characteristics ....................................................... 5
10 Package outline ..................................................... 8
11 Legal information ...................................................9
11.1 Data sheet status ................................................. 9
11.2 Definitions .............................................................9
11.3 Disclaimers ...........................................................9
11.4 Trademarks ........................................................ 10
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 March 2014
BT151-1000RT
SCR
BT151-1000RT
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BT151-1000RT.PDF ] | |
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