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PDF SUU09N10-76P Data sheet ( Hoja de datos )
| Número de pieza | SUU09N10-76P | |
| Descripción | N-Channel 100 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUU09N10-76P
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.076 at VGS = 10 V
100
0.096 at VGS = 6 V
ID (A)
9d
9d
Qg (Typ.)
8.5
TO-251
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Motor Control
Drain connected to DRAIN-TAB
GDS
Top View
Ordering Information
SUU09N10-76P-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current (t = 300 µs)
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
100
± 20
9d
9d
20
18
16.2
32.1b
2.5
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited
Symbol
RthJA
RthJC
Limit
50
3.9
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 63456
www.vishay.com
S11-2184-Rev. A, 07-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
SUU09N10-76P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 100
Limited by RDS(on)*
10
TJ = 150 °C
TJ = 25 °C
1
0.1
100 μs
1 ms
10 ms
DC, 10 s
1 s, 100 ms
1
0.000001
0.00001
0.0001
Time (s)
0.001
0.01
Single Pulse Avalanche Current Capability vs. Time
TC = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63456.
Document Number: 63456
www.vishay.com
S11-2184-Rev. A, 07-Nov-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUU09N10-76P.PDF ] | |
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