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PDF HTA55A160BW Data sheet ( Hoja de datos )
| Número de pieza | HTA55A160BW | |
| Descripción | 3 Quadrants TRIAC | |
| Fabricantes | SemiHow | |
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HTA55A160BW
3 Quadrants TRIAC
FEATURES
Repetitive Peak Off-State Voltage : 1600V
R.M.S On–State Current (IT(RMS) = 55A)
Gate Trigger Current : 50mA
General Description
HTA55A160BW triacs, with high ability to withstand the shock
loading of large current, provide high dv/dt rate with strong
resistance to electromagnetic interface. With high commutation
performances, 3 quadrants products especially recommended for
use on inductive load.
VDRM = 1600 V
IT(RMS) = 55 A
ITSM = 550 A
IGT(max) = 50mA
Symbol
TO-247S
T1
T2
G
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified )
Symbol
Parameter
Conditions
VDRM
VRRM
VDSM
VRSM
IT(AV)
IT(RMS)
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-State Voltage
Non Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
Sine wave, 50/60Hz, Gate open
TJ = 25 °C, tp = 10ms
Full sine wave, TC = 73oC
ITSM Surge On-State Current
Full cycle, 50Hz,
Sine wave, Non repetitive
I2t
dI/dt
IGM
PGM
PG(AV)
TJ
TSTG
Fusing Current
Critical Rate of Rise of On-State
Current
Peak Gate Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
t = 10ms
IG = 2 x IGT , tr ≤ 100ns,
f = 120Hz, TJ = 125 °C
TJ = 125 °C, tp = 20us
TJ = 125 °C, tp = 20us
TJ = 125 °C
Ratings
Unit
1600
1600
VDRM+100
VRRM+100
45
50
V
V
V
V
A
A
550 A
1500
A2S
100 A/us
8A
10 W
2
-40~+125
-40~+150
W
oC
oC
◎ SEMIHOW REV.A0,Jan 2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HTA55A160BW.PDF ] | |
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