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PDF 2SK1581 Data sheet ( Hoja de datos )
| Número de pieza | 2SK1581 | |
| Descripción | MOS Field Effect Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
MOSFET
MOS Field Effect Transistor
2SK1581
Features
Can be driven by Ics having a 3V single power supply.
Not necessry to consider driving current because of its thgh input impedance.
Possible to reduce the number of parts by omitting the bias resistor
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
16
16
200
400
200
150
-55 to +150
Unit
V
V
mA
mA
mW
1.B1aGseATE
2.2EmSiOtteUrRCE
3.3coDlleRctAorIN
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=16V,VGS=0
IGSS VGS= 3V,VDS=0
VGS(off) VDS=3.0V,ID=10 A
Yfs VDS=3.0V,ID=10mA
VGS=2.5V,ID=1mA
RDS(on)
VGS=4.0V,ID=1mA
Ciss
Coss VDS=3.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=10mA,VGS(on)=3.0V,RL=300
,VDD=3.0V,RG=10
tf
Min Typ Max Unit
10 A
10 A
0.9 1.2 1.5 V
20 70
ms
3.2 5.0
2.2 3.0
27 pF
37 pF
8 pF
100 ns
300 ns
210 ns
240 ns
Marking
Marking
G14
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SK1581.PDF ] | |
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