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PDF ALT6526 Data sheet ( Hoja de datos )
| Número de pieza | ALT6526 | |
| Descripción | Multi-Band LTE/CDMA/WCDMA/HSPA Power Amplifier | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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FEATURES
• LTE, WCDMA/HSPA & CDMA/EVDO
Applications
• High Output Power
• ≥ +27.3 dBm in LTE
• ≥ +28.6 dBm in WCDMA (R99)
• ≥ +27.5 dBm in CDMA (RC1)
• High Efficiency
• 40% in high power mode (WCDMA mode)
• Low profile 5 mm x 7 mm x 0.9 mm package
• 2 input ports, 5 output ports, all matched to
50 Ω impedance
• Integrated voltage regulator
• Built-in Directional Coupler
• Internal DC block on IN/OUT RF ports
• Low leakage in shutdown mode
• ESD Protection on all pins
• RoHS-compliant package, MSL-3, 260°C
ALT6526
Multi-Band LTE/CDMA/WCDMA/HSPA
Power Amplifier
DATA SHEET - Rev 2.5
ALT6526
22 Pin 5 mm x 7 mm x 0.9 mm
Surface Mount Module
APPLICATIONS
• LTE, WCDMA/HSPA handsets and data
devices operating in UMTS Bands 1, 2, 3, 4, 5,
8, 9,10, 18, 19, 20, 25, and 26
• CDMA/EV-DO handsets and data devices
operating in Band Class 0, 1, 4, 6, 8, 10, 14G
and 15
PRODUCT DESCRIPTION
The ALT6526 Power Amplifier module is designed for
3G/4G handsets, smartphones, modems and modules
operating in LTE, WCDMA/HSPA and CDMA/EVDO
modes. The module includes separate InGaP HBT
amplifier chains - one to support 850/900 bands, the
other for 1700/1900/2100MHz bands. An innovative
design allows the module to switch output among
as many as 5 different frequency bands. Both the
input and output RF ports are internally matched to
50 Ω. The ALT6526 offers improved efficiency and
low quiescent current, and includes integrated daisy
chained couplers to simplify board design and layout.
Figure 1: Block Diagram
07/2013
1 page  
ALT6526
Table 4a: Electrical Specifications - Band 1 (2100 MHz) LTE Operation (RB = 12, START = 0, QPSK)
(+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V)
PARAMETER
COMMENTS
MIN TYP MAX UNIT
POUT
VCC
VMODE
Gain
25 28.5 32.5
- 19 - dB
9 13 16
+27.4 dBm
+3 dBm
+9.6 dBm
3.3 V
0.7 V
3.3 V
0V
0V
+1.8 V
E-UTRA at ± 10 MHz offset
- -38 -34
+27.4 dBm 3.3 V
0V
-
-41 -
dBc
+3 dBm
0.7 V
0V
- -40 -34
+9.6 dBm 3.3 V +1.8 V
ACLR1 at ± 7.5 MHz offset (1)
- -39 -36
+27.4 dBm 3.3 V
0V
-
-40 -
dBc
+3 dBm
0.7 V
0V
- -41 -36
+9.6 dBm 3.3 V +1.8 V
ACLR2 at ± 12 MHz offset
- -60 -40
+27.4 dBm 3.3 V
0V
-
-60 -
dBc
+3 dBm
0.7 V
0V
- -60 -40
+9.6 dBm 3.3 V +1.8 V
Efficiency (1)
30.5 36
- 3.5
-
-
%
+27.4 dBm 3.3 V
+9.6 dBm 3.3 V
0V
+1.8 V
Quiescent Current
-
40 -
mA
through VCC1 + VCC pins,
VMODE = 1.8 V
Noise in Receive Band
GPS Noise
ISM Noise
- -135 - dBm/Hz 2110 - 2170 MHz
-
-137
- dBm/Hz POUT ≤ 27.4 dBm
-
-145
- dBm/Hz POUT ≤ 27.4 dBm
Out of Band Gain
Rx Band
GPS Band
ISM Band
- G - 2.8 -
- G - 2.4 -
- G-8 -
dB G = In-band Gain
Harmonics
2fO
3fO, 4fO
-
-
-42 -30
-50 -35
dBc
Input Impedance
- - 2:1 VSWR
Suprious Output Level
(all spurious outputs)
- - -70 dBc See note 2.
Load mismatch stress with
no permanent degradation or
failure
8:1 -
- VSWR Applies over full operating range
Coupling factor
- 27.5 -
dB
5 DATA SHEET - Rev 2.5
07/2013
5 Page 
ALT6526
Table 7a: Electrical Specifications - Band 5 (850 MHz) LTE Operation (RB = 12, START = 0, QPSK)
(+25 8C, VBATT = VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V )
PARAMETER
COMMENTS
MIN TYP MAX UNIT
POUT
VCC
VMODE
Gain
25.5 28 31.5
+27.4 dBm 3.3 V
-
17 -
dB
+3 dBm
0.7 V
10 13 16.5
+9.6 dBm 3.3 V
0V
0V
+1.8 V
E-UTRA at ± 10 MHz offset
- -38 -34
+27.4 dBm 3.3 V
0V
- -41 - dBc +3 dBm 0.7 V
0V
- -40 -34
+9.6 dBm 3.3 V
+1.8 V
ACLR1 at ± 7.5 MHz offset (1)
- -39 -36
+27.4 dBm 3.3 V
0V
- -42 - dBc +3 dBm 0.7 V
0V
- -40 -36
+9.6 dBm 3.3 V
+1.8 V
ACLR2 at ± 12 MHz offset
- -60 -40
+27.4 dBm 3.3 V
0V
- -60 - dBc +3 dBm 0.7 V
0V
- -60 -40
+9.6 dBm 3.3 V
+1.8 V
Efficiency (1)
30.5 35
-4
-
-
%
+27.4 dBm
+9.6 dBm
3.3 V
3.3 V
0V
+1.8 V
Quiescent Current
-
35 -
mA
through VCC1 + VCC pins,
VMODE = 1.8 V
Noise in Receive Band
GPS Noise
ISM Noise
-
-132
-136
-
-
dBm/Hz
741 - 821 MHz (2)
862 - 894 MHz
-
-158
- dBm/Hz POUT ≤ 27.4 dBm
-
-160
- dBm/Hz POUT ≤ 27.4 dBm
Out of Band Gain
Rx Band
GPS Band
ISM Band
- G - 0.7 -
- G - 40 -
- G - 50 -
dB G = In-band Gain
Harmonics
2fO
3fO, 4fO
-
-
-44 -35
-50 -35
dBc POUT ≤ +27.4 dBm
Input Impedance
- 2:1 - VSWR
Suprious Output Level
(all spurious outputs)
- - -70 dBc See note 3.
Load mismatch stress with
no permanent degradation or
failure
8:1 -
- VSWR Applies over full operating range
Coupling factor
- 27.5 -
dB
11 DATA SHEET - Rev 2.5
07/2013
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet ALT6526.PDF ] | |
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