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PDF NP75N04YUG Data sheet ( Hoja de datos )
| Número de pieza | NP75N04YUG | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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NP75N04YUG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0018EJ0100
Rev.1.00
Jul 01, 2010
Description
The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A)
• Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
Part No.
NP75N04YUG -E1-AY ∗1
NP75N04YUG -E2-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗3
Repetitive Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±75
±225
138
1.0
175
−55 to +175
35
123
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.09
150
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) ≤ 150°C, RG = 25 Ω
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
Page 1 of 6
1 page  
NP75N04YUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
VGS = 10 V
ID = 37.5 A
Pulsed
10
5
0
-100
0 100 200
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tr
tf
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
Pulsed
0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
Coss
Crss
VGS = 0V
f = 1MHz
10
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
8V
VDS
20 40
ID = 75 A
12
10
VGS 8
6
4
2
0
60 80
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10 100
IF - Drain Current - A
R07DS0018EJ0100 Rev.1.00
Jul 01, 2010
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP75N04YUG.PDF ] | |
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