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PDF NP179N04TUK Data sheet ( Hoja de datos )
| Número de pieza | NP179N04TUK | |
| Descripción | N-channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Preliminary Data Sheet
NP179N04TUK
40 V – 180 A – N-channel Power MOS FET
Application: Automotive
R07DS1248EJ0100
Rev.1.00
Feb 12, 2015
Description
The NP179N04TUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Super low on-state resistance
RDS(on) = 1.25 mΩ MAX. (VGS = 10 V, ID = 90 A)
• Low Ciss
Ciss = 8900 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP179N04TUK-E1-AY *1
NP179N04TUK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-263-7pin
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
VDSS
VGSS
ID(DC)
ID(pulse)
40
±20
±180
±720
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) *2
PT1
PT2
288
1.8
Channel Temperature
Tch 175
Storage Temperature
Repetitive Avalanche Current *3
Repetitive Avalanche Energy *3
Tstg –55 to +175
IAR 66
EAR 435
Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm)
*3 RG = 25 Ω, VGS = 20 V → 0 V
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52 °C/W
83.3 °C/W
R07DS1248EJ0100 Rev.1.00
Feb 12, 2015
Page 1 of 6
1 page  
NP179N04TUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3
2
1
0
–100 –50 0
VGS = 10 V
ID = 90 A
Pulsed
50 100 150 200
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
td(on)
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
tf
tr
10 100 1000
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2
VF(S-D) - Source to Drain Voltage - V
Preliminary
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
Crss
100
0.01
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 14
30 VDD = 32 V
20 V
8V
25
12
10
20 8
15 6
VGS
10 4
5 VDS
2
ID = 180 A
00
0 20 40 60 80 100 120 140 160 180
QG- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1 10 100 1000
IF - Drain Current - A
R07DS1248EJ0100 Rev.1.00
Feb 12, 2015
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP179N04TUK.PDF ] | |
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